JPS6237352Y2 - - Google Patents

Info

Publication number

JPS6237352Y2

JPS6237352Y2 JP13194182U JP13194182U JPS6237352Y2 JP S6237352 Y2 JPS6237352 Y2 JP S6237352Y2 JP 13194182 U JP13194182 U JP 13194182U JP 13194182 U JP13194182 U JP 13194182U JP S6237352 Y2 JPS6237352 Y2 JP S6237352Y2

Authority

JP

Japan

Prior art keywords

film

thin film

light

polyimide

emitting layer

Prior art date

1982-08-30

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000010409 thin film Substances 0.000 claims description 24
• 239000010408 film Substances 0.000 claims description 17
• 239000004952 Polyamide Substances 0.000 claims description 12
• 239000004642 Polyimide Substances 0.000 claims description 12
• 229920002647 polyamide Polymers 0.000 claims description 12
• 229920001721 polyimide Polymers 0.000 claims description 12
• 239000005083 Zinc sulfide Substances 0.000 claims description 5
• 229910052984 zinc sulfide Inorganic materials 0.000 claims description 5
• DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 5
• WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
• 239000000758 substrate Substances 0.000 description 10
• 239000011521 glass Substances 0.000 description 6
• 238000004519 manufacturing process Methods 0.000 description 6
• SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
• PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
• 229910052748 manganese Inorganic materials 0.000 description 4
• 239000011572 manganese Substances 0.000 description 4
• 230000009975 flexible effect Effects 0.000 description 3
• 229910021645 metal ion Inorganic materials 0.000 description 3
• RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
• XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
• 229910052782 aluminium Inorganic materials 0.000 description 2
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
• 239000011889 copper foil Substances 0.000 description 2
• 238000000151 deposition Methods 0.000 description 2
• 230000006866 deterioration Effects 0.000 description 2
• 238000010894 electron beam technology Methods 0.000 description 2
• 229910003437 indium oxide Inorganic materials 0.000 description 2
• PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
• 238000007740 vapor deposition Methods 0.000 description 2
• HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
• 239000013078 crystal Substances 0.000 description 1
• 230000007423 decrease Effects 0.000 description 1
• 238000000295 emission spectrum Methods 0.000 description 1
• 238000005516 engineering process Methods 0.000 description 1
• 238000001704 evaporation Methods 0.000 description 1
• 230000008020 evaporation Effects 0.000 description 1
• 239000012535 impurity Substances 0.000 description 1
• 238000009413 insulation Methods 0.000 description 1
• 239000012212 insulator Substances 0.000 description 1
• 229910052742 iron Inorganic materials 0.000 description 1
• 238000010030 laminating Methods 0.000 description 1
• 239000000463 material Substances 0.000 description 1
• 238000000034 method Methods 0.000 description 1
• 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
• 238000009751 slip forming Methods 0.000 description 1
• CADICXFYUNYKGD-UHFFFAOYSA-N sulfanylidenemanganese Chemical compound [Mn]=S CADICXFYUNYKGD-UHFFFAOYSA-N 0.000 description 1
• 238000000411 transmission spectrum Methods 0.000 description 1
• 238000007738 vacuum evaporation Methods 0.000 description 1
• 238000005019 vapor deposition process Methods 0.000 description 1
• 239000011701 zinc Substances 0.000 description 1
• 229910052725 zinc Inorganic materials 0.000 description 1